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Kamiya, Junichiro; Kinsho, Michikazu; Hayashi, Naoki; Hotchi, Hideaki; Ogiwara, Norio; Tani, Norio; Watanabe, Yasuhiro
Journal of the Vacuum Society of Japan, 57(4), p.131 - 135, 2014/04
In J-PARC 3GeV synchrotron (RCS), new quadrupole magnets (quadrupole correctors) are planned to be installed in order to correct the edge focusing effect and tune. In this report, we describe a deliberation flow about the design of the beam ducts, which are installed in the quadrupole corrector. The effects of eddy current were examined in the case of the titanium duct. The calculated results showed that the temperature rise was too much (up to over 350
C) and the magnetic field in the beam duct is largely distorted. Therefore we decided to employ alumina ceramics beam ducts. The stress and displacement, which are caused by the atmospheric pressure, were estimated by simulating the realistic equipments in the beam line. It was found that there was no large stress and displacement by installing the alumina ceramics duct.
molecule at Ni(001) and (111) surfacesIwai, Yutaro*; Teraoka, Yuden; Inoue, Keisuke*; Yoshigoe, Akitaka; Okada, Ryuta
no journal, ,
no abstracts in English
1 surface at room temperature using synchrotron radiation XPSYoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*
no journal, ,
Ge is much attracting as a new material in future electronic devices and therfore oxidation of Ge crystal surfaces is now important. In this conference, we report that evolution of oxides on Ge(100)-21 surface up to saturated oxidation for thermal-O and supersonic O (2.2 eV) beams was studied by time-resolved observation using synchrotron radiation XPS. We found that Ge
/Ge
is almost constant from early stages of oxidation to saturation.
at Ge(100)-21 surface at room temperatureYoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*
no journal, ,
Ge and its oxidation are attracting widespread interest in the field of development of future electronic devices. In this conference, we report incident energy dependence of initial sticking probability for a Ge(100)-21 surface at room temperature. We obtained results which suggest two energy barriers for O adsorption at around 0.1eV and 0.47 eV.
Baba, Yuji; Shimoyama, Iwao; Hirao, Norie; Sekiguchi, Tetsuhiro
no journal, ,
no abstracts in English
Wada, Ken*; Maekawa, Masaki; Fukaya, Yuki; Mochizuki, Izumi*; Hyodo, Toshio*; Kawasuso, Atsuo
no journal, ,
no abstracts in English
Hyodo, Toshio*; Fukaya, Yuki; Mochizuki, Izumi*; Maekawa, Masaki; Wada, Ken*; Shidara, Tetsuo*; Ichimiya, Ayahiko*; Kawasuso, Atsuo
no journal, ,
no abstracts in English
Fukaya, Yuki; Maekawa, Masaki; Mochizuki, Izumi*; Wada, Ken*; Hyodo, Toshio*; Kawasuso, Atsuo
no journal, ,
no abstracts in English
(110)-(
) surface using high-brightness reflection high-energy positron diffractionMochizuki, Izumi*; Ariga, Hiroko*; Fukaya, Yuki; Wada, Ken*; Hyodo, Toshio*; Asakura, Kiyotaka*; Maekawa, Masaki; Kawasuso, Atsuo
no journal, ,
no abstracts in English
Sekiguchi, Tetsuhiro; Baba, Yuji; Shimoyama, Iwao; Hirao, Norie; Honda, Mitsunori; Deng, J.*
no journal, ,
The orientation of organic semiconducting molecules on surfaces plays a crucial role in improving the properties of electronic devices. We prepared thin films of silicon phthalocyanine dichroride (SiPcCl) on graphite and copper by spin-cast followed by heating to 350 C at ambient condition. We investigate the molecular orientation effect of the films using angle-dependent near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy. Si 1s NEXAFS spectra for the thin films after annealing are very different each other, indicating that the corresponding reactions thus the structures of final products are different. The structures of the reaction products are estimated with the help of ab initio molecular orbital calculations that fit the observed NEXAFS spectra. Moreover, for the purpose of better understanding of orientation mechanism, we develop an instrument to measure the dependence of linear-polarization angles of the VUV light on PEEM images of the thin film surface.
Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Hirao, Norie
no journal, ,
no abstracts in English
Ikeura, Hiromi*; Sekiguchi, Tetsuhiro
no journal, ,
Thin films of bulk-hetero-junction-type organic semiconductor were prepared from blend mixture of poly(3-hexylthiophene) of electronic conducting polymer as donor and [6,6]-phenyl-C61-lactoic acid methyl ester as acceptor in p-xylene solution. To better understand charge separation mechanism between donor and acceptor, we have investigated the electronic state, orientation, and electron-transferring velocity using X-ray absorption and Auger electron spectroscopy.
